IBM researchers recently demonstrated the operation of graphene field-effect transistors (FETs) at GHz frequencies and achieved the highest frequencies reported so far using this novel non-silicon electronic material. This accomplishment is an important milestone for the Carbon Electronics for RF Applications (CERA) programme sponsored by DARPA, as part of the effort to develop the next generation of communication devices. Graphene is a special form of graphite, consisting of a single layer of carbon atoms packed in honeycomb lattice, similar to an atomic scale chicken wire. Graphene has attracted immense worldwide attention and activities because its unusual electronic properties may eventually lead to vastly faster transistors than any transistors achieved so far.
The operation speed of a transistor is determined by the size of the device and the speed at which electrons travel. The size dependence was one of the driving forces to pursue ever-shrinking Si transistors in semiconductor industries. A key advantage of graphene lies in the very high electron speed with which electrons propagate in it, essential for achieving high-speed, high-performance transistors. In the next phase, the IBM researchers also plan to pursue RF circuits based on these high-performance transistors.
The operation speed of a transistor is determined by the size of the device and the speed at which electrons travel. The size dependence was one of the driving forces to pursue ever-shrinking Si transistors in semiconductor industries. A key advantage of graphene lies in the very high electron speed with which electrons propagate in it, essential for achieving high-speed, high-performance transistors. In the next phase, the IBM researchers also plan to pursue RF circuits based on these high-performance transistors.
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